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| Product Description Stanford Microdevices NGA-586 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 80mA , the NGA-586 typically provides +39.6 dBm output IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DCblocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Freq. @T L=+25C 24 GAIN NGA-586 DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features High Gain : 18.6 dB at 1950 MHz Cascadable 50 Ohm Patented InGaP Technology 0 20 Gain (dB) IRL -10 16 ORL -20 Return Loss (dB) Operates From Single Supply Low Thermal Resistance Package Applications Cellular, PCS, CDPD Wireless Data, SONET Satellite Units dB dB dB dBm dBm dBm dBm M Hz dB dB dB V C/W 1950 M Hz 1950 M Hz 1950 M Hz 4.5 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 17.8 Ty p. 19.8 18.6 17.9 18.9 18.5 39.6 34.0 5500 14.9 19.5 3.5 4.9 121 5.4 Max. 21.8 12 -30 8 0 1 2 3 4 Frequency (GHz) 5 6 -40 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point (Pow er out per tone = 0dBm) Bandw idth Determined by Return Loss (<-10dB) IRL ORL NF VD RTh Input Return Loss Output Return Loss Noise Figure Device Voltage Thermal Resistance VS = 8v RBIAS = 39 Ohms ID = 80mA Typ. TL = 25C Test Conditions: IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101105 Rev. D Preliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Frequency (MHz) Sy mbol Parameter Unit 100 500 850 1950 2400 3500 G OIP3 P1dB IRL ORL S21 NF Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS = 8 V RBIAS = 39 Ohms dB dBm dBm dB dB dB dB 20.5 37.7 20.1 29.3 35.9 22.7 3.7 20.1 38.6 19.0 21.3 33.8 22.7 3.5 19.8 39.6 18.9 17.7 28.7 22.6 3.4 18.6 34.0 18.5 14.9 19.5 22.1 3.5 17.9 32.0 17.9 15.4 19.6 21.9 3.5 15.5 27.4 13.7 15.8 25 21.1 3.6 Test Conditions: ID = 80 mA Typ. TL = 25C OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = ZL = 50 Ohms Noise Figure vs. Frequency VD= 4.9 V, ID= 80 mA 5.0 4.5 Noise Figure (dB) 4.0 3.5 3.0 2.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Absolute Maximum Ratings Parameter Max. Device Current (ID) Absolute Limit 120 mA TL=+25C Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Operating Temp. Range (TL) 6V +15 dBm +150C -40C to +85C +150C Max. Storage Temp. Operation of this device beyond any one of these limits may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth OIP3 vs. Frequency VD= 4.9 V, ID= 80 mA P1dB vs. Frequency VD= 4.9 v, ID= 80 mA 45 40 OIP3 (dBm) 35 30 25 20 15 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 22 TL P1dB (dBm) +25C -40C +85C 20 18 16 14 12 10 0 0.5 1 1.5 2 TL +25C -40C +85C 2.5 3 3.5 Frequency (GHz) 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101105 Rev. D Preliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier S21 vs. Frequency S11 vs. Frequency 25 VD= 4.9 v, ID= 80 mA 0 VD= 4.9 v, ID= 80 mA 20 S21(dB) TL +25C -40C +85C -5 -10 S11(dB) -15 -20 TL +25C -40C +85C 15 10 -25 5 0 1 2 3 4 Frequency (GHz) 5 6 -30 0 1 2 3 4 Frequency (GHz) 5 6 -15 -17 S12(dB) -19 -21 -23 -25 0 1 VD= 4.9 v, ID= 80 mA S12 vs. Frequency -5 -10 -15 S22(dB) -20 -25 -30 -35 VD= 4.9 v, ID= 80 mA S22 vs. Frequency TL TL +25C -40C +85C +25C -40C +85C 2 3 4 Frequency (GHz) 5 6 0 1 2 3 4 Frequency (GHz) 5 6 VD vs. ID over Temperature for fixed VS= 8 v, RBIAS= 39 ohms * 95 90 VD(Volts) 5.3 5.1 +85C +25C VD vs. Temperature for Constant ID = 80 mA 85 ID(mA) 80 75 70 65 4.6 4.9 4.7 4.5 4.3 -40C 4.7 4.8 4.9 VD(Volts) 5.0 5.1 -40 -15 10 35 Temperature(C) 60 85 * Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101105 Rev. D Preliminary NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier NGA-586 Basic Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 VS CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 4 NGA-586 3 CB RF out Recommended Bias Resistor Values for ID=80mA Supply Voltage(VS) RBIAS 7.5V 33 8V 39 10V 62 12V 91 2 VS RBIAS Note: RBIAS provides DC bias stability over temperature. 1 uF 1000 pF Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. LC N5 CD CB CB Part Identification Marking The part will be marked with an N5 designator on the top surface of the package. 3 Pin # 1 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 2 GND 4 N5 1 2 3 For package dimensions, refer to outline drawing at www.stanfordmicro.com RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. GND Sames as Pin 2 4 Caution: ESD sensitive Part Number Ordering Information Part Number NGA-586 Reel Size 7" Devices/Reel 1000 Appropriate precautions in handling, packaging and testing devices must be observed. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101105 Rev. D |
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